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| Specification Comparison Vishay Siliconix Si6880AEDQ vs. SI6880EDQ Description: N-Channel, 1.8-V (G-S) Battery Switch with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6880AEDQ-T1 Replaces SI6880EDQ-T1 Si6880AEDQ-T1--E3 (Lead Free version) Replaces SI6880EDQ-T1 Summary of Performance: The Si6880AEDQ is the replacement for the original SI6880EDQ; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD Tj and Tstg RthJA Si6880AEDQ 20 "12 7.2 5.7 30 1.5 1.5 0.96 -55 to 150 84 SI6880EDQ 20 "12 7.5 6 30 1.6 1.78 1.14 -55 to 150 70 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si6880AEDQ Parameter Static Gate-Threshold Voltage Gate-Body Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance S O Forward Transconductance Diode Forward Voltage VGS = 4.5 V VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V gfs VSD rDs(on) VGS = 4.5 V VGS = 12 V VG(th) IGSS IDSS ID(on) 20 0.014 0.016 0.018 45 0.61 1.1 0.018 0.022 0.025 0.8 0.9 "1000 "10 1 20 0.015 0.017 0.020 39 0.65 1.1 0.018 0.022 0.016 S V W 0.45 "250 "10 1 V nA mA mA A SI6880EDQ Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 22 2.0 3.6 35 27 3.0 5.5 40 nC Switching Turn-On Time Turn-Off Turn Off Time td(on) tr td(off) tf 1.0 1.6 6 5.5 1.5 2.5 10 10 1.5 800 6 5.5 2.3 1200 10 10 www.vishay.com ms Document Number: 72902 22-Mar-04 1 |
Price & Availability of SI6880EDQ
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